| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon nitride film with high coverage and high withstand voltage. SOLUTION: A catalyst 11 put in a vacuum reservoir 2 is heated, Si<SB>n</SB>H<SB>2n+2</SB>(where n is 1 or 2) gas, NH<SB>3</SB>gas and H<SB>2</SB>gas are led into the reservoir 2, and the Si<SB>n</SB>H<SB>2n+2</SB>gas, NH<SB>3</SB>gas and H<SB>2</SB>gas are brought into contact with the heated catalyst 11 to be decomposed, thereby forming the silicon nitride film. Since the H<SB>2</SB>gas is added when forming the film, the coverage for a step is high, and in particular, if the film is formed at a low pressure less than 10 Pa, the silicon nitride film also with high withstand voltage can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
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