| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a double gate FinFET, in which size management of a fin region is easy. SOLUTION: The semiconductor device has fin regions AA1-1 and AA1-2 formed of a semiconductor layer in projection-shape formed linearly on a semiconductor substrate, a gate insulating film formed on a flank of the fin regions, a gate electrode GC1-1 formed on the gate insulating film and disposed crossing the fin regions AA1-1 and AA1-2, a source region and a drain region formed in a fin region across a channel region formed on the flank of a fin region below the gate electrode, and a contact material formed on the fin regions AA1-1 and AA1-2. A contact region C1-2 on a fin region to which the contact material is connected resides in both a fin region disposed extending along the channel length of the channel region and a fin region disposed curvedly to a direction different from the channel length direction. COPYRIGHT: (C)2009,JPO&INPIT
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