发明名称 Photolithography Based Fabrication of 3D Structures
摘要 A method includes depositing a first photoresist layer having a first thickness above a substrate, defining a first opening in the first photoresist layer by exposing the first photoresist layer to radiation, the first opening having a first width. The method includes depositing a conformal passivation layer directly on the first photoresist layer, and depositing a second photoresist layer having a second thickness on the conformal passivation layer. The method includes defining a second opening in the second photoresist layer by exposing the second photoresist layer to radiation, the second opening having a second width greater than the first width, and depositing a metal layer above the first photoresist layer and the substrate to form an electrode, a dielectric layer being provided to contact the metal layer. The method includes removing the first photoresist layer and the second photoresist layer. The first photoresist layer can include a positive photoresist.
申请公布号 US2016172596(A1) 申请公布日期 2016.06.16
申请号 US201414572649 申请日期 2014.12.16
申请人 Carbonics Inc. 发明人 Rutherglen Christopher Michael
分类号 H01L51/00;H01L51/05 主分类号 H01L51/00
代理机构 代理人
主权项 1. (canceled)
地址 Marina del Rey CA US