发明名称 GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.
申请公布号 US2016172541(A1) 申请公布日期 2016.06.16
申请号 US201615016722 申请日期 2016.02.05
申请人 NGK INSULATORS, LTD. 发明人 WATANABE Morimichi;YOSHIKAWA Jun;NANATAKI Tsutomu;IMAI Katsuhiro;SUGIYAMA Tomohiko;YOSHINO Takashi;TAKEUCHI Yukihisa;SATO Kei
分类号 H01L33/32;H01L33/00;C30B29/40;C30B19/12;C30B9/00;C30B25/20;H01L33/16;C30B19/02 主分类号 H01L33/32
代理机构 代理人
主权项 1. A self-supporting gallium nitride substrate composed of a plate composed of a plurality of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, wherein an aspect ratio T/DT, which is defined as a ratio of a thickness T of the self-supporting gallium nitride substrate to a cross-sectional average diameter DT at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting gallium nitride substrate, is 0.7 or greater.
地址 Nagoya-City JP