发明名称 Molecular layer deposition using reduction process
摘要 A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.
申请公布号 US9376455(B2) 申请公布日期 2016.06.28
申请号 US201414546948 申请日期 2014.11.18
申请人 Veeco ALD Inc. 发明人 Lee Sang In;Hwang Chang Wan
分类号 C07F7/00;B05D1/00;C07F5/06;C07F7/18;C23C16/40;C23C16/452;C23C16/455 主分类号 C07F7/00
代理机构 Fenwick & West LLP 代理人 Fenwick & West LLP
主权项 1. A method for depositing material onto a substrate, the method comprising: (a) exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate; (b) exposing the substrate injected with the metal-containing precursor to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate; and (c) exposing the substrate to radicals of a reducing agent to increase reactivity of the material deposited on the substrate.
地址 Fremont CA US