| 发明名称 |
METHOD FOR DOPING SILICON SHEETS |
| 摘要 |
A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in:
performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer;forming an oxide layer (40) on the partially doped surface (10); andperforming a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer. |
| 申请公布号 |
US2016204299(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201414777798 |
申请日期 |
2014.03.20 |
| 申请人 |
ION BEAM SERVICES |
发明人 |
BECHEVET Bernard;JOURDAN Johann |
| 分类号 |
H01L31/18;H01L31/068 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in:
performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer. |
| 地址 |
Peynier FR |
