SEMICONDUCTOR DEVICES HAVING GATE STRUCTURES WITH SKIRT REGIONS

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

主权项

1. A semiconductor device comprising:
an active fin protruding from a substrate and extending in a first direction; a gate structure extending in a second direction that intersects the first direction, the gate structure on the active fin; and a field insulation layer on a bottom portion of a long side of the active fin, an intersection of a top surface of the field insulation layer and the active fin defining at least one line segment, wherein the gate structure includes a skirt that extends outwardly in the first direction to cover a portion of the at least one line segment while leaving another portion of the at least one line segment exposed.