| 发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a silicon carbide semiconductor device includes steps of preparing a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, forming a groove portion in the first main surface of the silicon carbide substrate, and cutting the silicon carbide substrate at the groove portion. The step of forming the groove portion includes a step of thermally etching the silicon carbide substrate using chlorine. Thereby, a method for manufacturing a silicon carbide semiconductor device capable of suppressing damage to a chip is provided. |
| 申请公布号 |
US2016204220(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201414913217 |
申请日期 |
2014.07.09 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Wada Keiji;Masuda Takeyoshi;Sakai Mitsuhiko |
| 分类号 |
H01L29/66;H01L21/3065;H01L29/16;H01L21/02;H01L29/423;H01L21/04;H01L21/324 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a silicon carbide semiconductor device, comprising steps of:
preparing a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface; forming a groove portion in the first main surface of the silicon carbide substrate; and cutting the silicon carbide substrate at the groove portion, wherein the step of forming the groove portion includes a step of thermally etching the silicon carbide substrate using chlorine. |
| 地址 |
Osaka JP |
