SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A Fin FET semiconductor device includes a fin structure extending in a first direction and extending from an isolation insulating layer. The Fin FET device also includes a gate stack including a gate electrode layer, a gate dielectric layer, side wall insulating layers disposed at both sides of the gate electrode layer, and interlayer dielectric layers disposed at both sides of the side wall insulating layers. The gate stack is disposed over the isolation insulating layer, covers a portion of the fin structure, and extends in a second direction perpendicular to the first direction. A recess is formed in an upper surface of the isolation insulating layer not covered by the side wall insulating layers and the interlayer dielectric layers. At least part of the gate electrode layer and the gate dielectric layer fill the recess.

主权项

1. A semiconductor device, comprising:
a Fin FET device including:
a fin structure extending in a first direction, an upper portion of the fin structure being exposed from an isolation insulating layer and a lower portion of the fin structure being embedded in the isolation insulating layer;a gate stack including a gate electrode layer, a gate dielectric layer, sidewall insulating layers disposed at both vertical sides of the gate electrode layer, the gate stack being disposed over the isolation insulating layer and covering the upper portion of the fin structure located above the lower portion, the gate stack extending in a second direction perpendicular to the first direction; andinterlayer dielectric layers disposed at both vertical sides of the sidewall insulating layers, wherein: a recess is formed in an upper surface of the isolation insulating layer not covered by the sidewall insulating layers and the interlayer dielectric layers, at least part of the gate electrode layer and the gate dielectric layer fill the recess, and lateral ends of the recess penetrate under the sidewall insulating layers, respectively, and are located just below the sidewall insulating layers, respectively.