METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND A METHOD OF MANUFACTURING SAME USING DUMMY GATE PROCESS

摘要

A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences.

主权项

1. A semiconductor device comprising:
a silicon substrate; a gate electrode over the silicon substrate; a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film at least including hafnium; as viewed in cross section, an offset spacer between a sidewall film and the gate electrode; a source/drain region in the substrate, the source/drain region having a lattice constant different from a lattice constant of silicon substrate; and a work function control film between the gate insulating film and the gate electrode.