发明名称 |
Method for sensing degradation of organic light emitting display |
摘要 |
A method for sensing degradation of an organic light emitting display includes an initialization step for applying a sensing data voltage to a gate node of a driving TFT and applying an initialization voltage to a source node of the driving TFT, a boosting step for floating the gate node and the source node of the driving TFT and applying a drain-to-source current of the driving TFT to an organic element, a sensing step for again applying the initialization voltage to the source node of the driving TFT, setting a gate-to-source voltage of the driving TFT depending on a degradation degree of the organic element, and storing the drain-to-source current of the driving TFT determined by the set gate-to-source voltage in a line capacitor, and a sampling step for outputting a voltage stored in the line capacitor as a sensing voltage. |
申请公布号 |
US9396675(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201414584071 |
申请日期 |
2014.12.29 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
Kim Changhee;Oh Kilhwan;Shin Hunki |
分类号 |
G09G3/00;G09G3/32 |
主分类号 |
G09G3/00 |
代理机构 |
Fenwick & West LLP |
代理人 |
Fenwick & West LLP |
主权项 |
1. A method for sensing degradation of an organic light emitting display including a plurality of subpixels each including an organic element and a driving thin film transistor (TFT) controlling an emission amount of the organic element and a sensing unit connected to at least one of the plurality of subpixels through a sensing line, the method comprising:
during an initialization period, applying a sensing data voltage to a gate node of the driving TFT and applying an initialization voltage to a source node of the driving TFT to turn on the driving TFT; during a boosting period, floating the gate node and the source node of the driving TFT and applying a drain-to-source current of the driving TFT to the organic element to turn on the organic element; during a sensing period, again applying the initialization voltage to the source node of the driving TFT, a gate-to-source voltage of the driving TFT set to be indicative of a degradation degree of the organic element as a result of again applying the initialization voltage, and charging a line capacitor of the sensing line with the drain-to-source current of the driving TFT that is controlled by the set gate-to-source voltage; and during a sampling period, outputting a voltage of the line capacitor as a sensing voltage. |
地址 |
Seoul KR |