| 摘要 |
The present invention forms an organic thin film at a high film formation rate by vapor of an organic compound generated by heating. A film formation chamber 43 is disposed in the interior of a buffer chamber 42; a part of the side surface of a center roller 17 is inserted in the film formation chamber 43 from a film formation chamber opening 54; and a base material film 23 is run in close contact with the side surface in the part. The vapor is carried by a carrier gas from a vapor generation device 26 connected to the film formation chamber 43; the center roller 17 is cooled by a cooling device 30; the base material film 23 is cooled to temperatures lower than the condensation temperature of the vapor; and an organic raw material layer 35 is formed on the surface of the base material film 23 by the vapor discharged into the film formation chamber 43, which is cured by the irradiation with an energy ray in the curing chamber 44 while rotating the center roller 17. The buffer chamber 42 is evacuated to a low pressure so that the carrier gas and the vapor that flowed out of the film formation chamber opening 54 do not flow into the curing chamber 44 and the roll chamber 41. |
