Laser processing for high-efficiency thin crystalline silicon solar cell fabrication

摘要

A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.

主权项

1. A method for making a back contact solar cell, said method comprising the steps of:
forming base isolation regions in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns; performing pulsed laser ablation of a substance on said crystalline silicon back contact solar cell substrate to form base openings, wherein said substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide; selectively doping emitter regions; selectively doping base regions; forming contact openings for said selectively doped base regions and said selectively doped emitter regions; and selectively forming metallization on said selectively doped base regions and said selectively doped emitter regions.