发明名称 |
Device for electro-optical sampling of a microwave frequency signal |
摘要 |
A device for electro-optical sampling of a microwave frequency signal is disclosed. In one aspect, the device includes a microwave transmission line for transmitting a microwave signal, the microwave line including an interruption zone configured to be rendered conducting under the effect of an optical control signal so as to carry out a function of optically controlled interrupter switch. The device also includes, in the interruption zone, a layer of nanostructured semiconductor material, including a periodic or quasi-periodic tiling of nanostructures. The layer of nanostructured semiconductor material is placed, at the level of the interruption zone, in suspension or on a dielectric material of lower refractive index than the refractive index of the semiconductor material, the layer of nanostructured semiconductor material being able to carry out the function of optically controlled interrupter switch. |
申请公布号 |
US9423568(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201514684102 |
申请日期 |
2015.04.10 |
申请人 |
THALES;Université Pierre et Marie Curie (Paris 6) |
发明人 |
Combrié Sylvain;De Rossi Alfredo;Tripon-Canseliet Charlotte;Chazelas Jean |
分类号 |
G02B6/35;H03K17/78;G08C19/36;G01R29/08 |
主分类号 |
G02B6/35 |
代理机构 |
Knobbe, Martens, Olson & Bear, LLP |
代理人 |
Knobbe, Martens, Olson & Bear, LLP |
主权项 |
1. An electro-optical sampling device for electro-optical sampling of a microwave frequency signal comprising:
a microwave transmission line configured to transmit a microwave signal, the microwave transmission line comprising an interruption zone configured to be rendered conducting under the effect of an optical control signal so as to carry out a function of optically controlled interrupter switch, wherein the device further comprises, in the interruption zone, a layer of nanostructured semiconductor material comprising a periodic or quasi-periodic tiling of nanostructures, the semiconductor material having a refractive index, the layer of nanostructured semiconductor material being placed, at the level of the interruption zone, in suspension or on a dielectric material of lower refractive index than the refractive index of the semiconductor material, the layer of nanostructured semiconductor material configured to carry out the function of optically controlled interrupter switch. |
地址 |
Neuilly sur Seine FR |