Zinc blende cadmium—manganese—telluride with reduced hole compensation effects and methods for forming the same

摘要

Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blend crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.

主权项

1. A method for forming cadmium-manganese-telluride (CMT), the method comprising:
positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises at least one target in the processing chamber, the at least one target including material comprising cadmium, manganese, tellurium, or a combination thereof; introducing dimethyl cadmium gas into the processing chamber; and causing said material to be ejected from the at least one target, the material forming CMT above the substrate.