| 发明名称 |
Resistive random access memory cell structure |
| 摘要 |
A system including a resistive element of a memory cell and a device to access the resistive element of the memory cell. The resistive element includes (i) a first electrode, and (ii) a second electrode. The device includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact. One or more of the first contact and the second contact of the device is respectively connected to one or more of the first electrode and the second electrode of the resistive element via a third contact. A size of the third contact decreases from the one or more of the first contact and the second contact of the device to the one or more of the first electrode and the second electrode of the resistive element of the memory cell. |
| 申请公布号 |
US9490427(B2) |
申请公布日期 |
2016.11.08 |
| 申请号 |
US201514955326 |
申请日期 |
2015.12.01 |
| 申请人 |
Marvell World Trade LTD. |
发明人 |
Sutardja Pantas;Wu Albert;Lee Winston;Lee Peter;Chang Runzi |
| 分类号 |
G11C13/00;H01L45/00;H01L27/24 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A system comprising:
a resistive element of a memory cell, wherein the resistive element includes (i) a first electrode, and (ii) a second electrode; and a device to access the resistive element of the memory cell, wherein the device includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact, wherein one or more of the first contact and the second contact of the device is respectively connected to one or more of the first electrode and the second electrode of the resistive element via a third contact, wherein a size of the third contact decreases from the one or more of the first contact and the second contact of the device to the one or more of the first electrode and the second electrode of the resistive element of the memory cell. |
| 地址 |
St. Michael BB |
