| 摘要 |
<p>PURPOSE: An exposure mask having line and space pattern which the formation method of the semiconductor device minutes is used. The complex exposure process and equipment are not to need. CONSTITUTION: A photosensitive film is spread on the top of the semiconductor substrate. The photosensitive film is developed through the exposure mask, the light layer pattern is formed. Here, the mask pattern(20) of line and space is formed in the exposure mask. The pitch of the photosensitive pattern is smaller than the pitch of the mask pattern. Line and space pattern have the rate of 1:3. The exposed mask the phase shifting mask.</p> |
