| 摘要 |
PURPOSE:To obtain clad layers having high quality crystallizability by a method wherein whose crystalline structure is formed of a mixed crystal represented by a wurtzite type specific formula. CONSTITUTION:This semiconductor light emitting device is composed of an Al2O3 substrate 1, an n-GaN contact layer 2, an n-AlxGa1-xPyN1-y clad layer 3, a GaN active layer 4, a p-Ga1-xPyN1-y clad layer 5, a p-GaN contact layer 6, an n electrode 7 e.g. Al etc., and a p electrode 8 e.g. Au etc. At this time, said clad layers 3, 5 whose crystalline structure is formed of wurtzite type AlxGa1-xPyN1-x (where 0<x<=1 and 0<y<=0.2) mixed crystal to obtain the high quality crystallizability clad layers 3, 5. Through these procedures, a lattice matched element structure leaving the high quality crystallizability intact can be easily formed. |
