| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electro-optical device comprising a semiconductor device formed in a semiconductor layer on an insulator layer, wherein a substrate floating effect unique to an SOI structure is suppressed without decreasing the aperture percentage. SOLUTION: By setting the thickness of a semiconductor layer in a pixel section to 100 nm or below using a P channel type transistor having a small substrate floating effect for a pixel transistor, and introducing recombination centers by implanting Ar ions to prevent accumulation of excessive carriers, the electro-optical device which can be suppressed with the substrate floating effect without providing a body contact and which has a high aperture percentage and a little light leakage can be obtained.</p> |
