| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which can accurately determine the presence or absence of a carbon pollution of a thermal oxidation film formed on a semiconductor substrate. SOLUTION: A method for determining an impurity pollution includes simultaneously treating of a substrate to be determined at pretreating time before thermal oxidation of a semiconductor substrate or a semiconductor material (a). The method includes a step of measuring a natural oxide film thickness formed on the substrate to be determined (b). The method includes a step of simultaneously treating the substrate to be determined at the thermal oxidation treating time of the semiconductor substrate or the semiconductor material, and forming the thermal oxidation film on the substrate to be determined (c). The method includes a step of measuring the thickness of the thermal oxidation film formed on the substrate to be determined (d). A thermal oxidation film thickness standard after the thermal oxidation is set on the basis of the natural oxidation film thickness. Then, the measured thermal oxidation film thickness is compared with the thermal oxidation thin film thickness standard (e), (f). Then, as a result of the comparison, the presence or absence of the impurity pollution of the thermal oxidation film formed on the semiconductor substrate or the semiconductor material is determined (g), (h). COPYRIGHT: (C)2005,JPO&NCIPI
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