| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for effectively eliminating residue formed on a mask by dry etching without negatively affecting the following processes in executing a manufacturing method for a semiconductor device or the like. SOLUTION: The mask used for the dry etching has a double-layer structure consisting of an upper layer and a lower layer. The upper layer is made of a material etched easily by a proper wet etchant, while the lower layer is made of a material not etched easily by the above etchant. The dry etching is executed using the double-layer structure mask, and then the wet etching is carried out to eliminate only the upper layer, so that the residue on the mask resulting from the dry etching is eliminated. COPYRIGHT: (C)2005,JPO&NCIPI
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