| 摘要 |
The invention seeks to realize an excellent electrostatic capacitance detection device. An electrostatic capacitance detection device is formed of M individual power supply lines, N individual output lines, arranged in a matrix of M rows x N columns, and electrostatic capacitance detection elements provided on the crossing points of the individual power supply lines and the individual output lines, each of the electrostatic capacitance detection elements is formed of a signal detection element and a signal amplification element, the signal detection element is formed of a capacitance detecting electrode and a capacitance detecting dielectric layer, the signal amplification element formed of a MIS type thin film semiconductor device for signal amplification, including a gate electrode, a gate insulating layer and a semiconductor layer. <IMAGE> |
