METHOD FOR FABRICATING THIN FILM TRANSISTOR FOR OBTAIN UNIFORM CHARACTERISTIC OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a TFT(Thin Film Transistor) is provided to obtain uniform characteristic of the TFT and reduce leakage current of the TFT by making the length of grains of an active layer and the interval of protrusions of the active layer between impurity regions uniform. CONSTITUTION: A buffer layer(33) and a pre-active layer are formed on a substrate(31). A gate insulating layer(41) and a gate electrode(43) having a plurality of fingers are formed on the pre-active layer. A laser beam is irradiated to the pre-active layer using the gate electrode as a mask to crystallize the pre-active layer so as to form an active layer(37). Impurity regions are formed in exposed portions of the active layer using the gate electrode as a mask.