| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid the fidelity lowering of a transfer image on a wafer by correcting a mask pattern in consideration of an influence caused by an oblique incidence effect, as for a mask for exposure coping with ultrashort ultraviolet light. <P>SOLUTION: The mask pattern is corrected by performing: a step (S102) for requiring the energy E<SB>0</SB>of light obtained by reflecting ultrashort ultraviolet light when ultrashort ultraviolet light is vertically incident on the mask surface, or when it enters at an angle considered as the vertical incidence; a step (S103) for requiring the energy E<SB>1</SB>of the light obtained by reflecting the ultrashort ultraviolet light when the ultrashort ultraviolet light is obliquely incident on the mask surface; a step (S104) for correcting the mask pattern based on the comparison result of the energy E<SB>0</SB>and the energy E<SB>1</SB>. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
