| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a quantum dot which can form a pure InAs quantum dot at a desired position or with a desired density on a GaAs substrate, an AlAs substrate, or a GaAlAs alloy substrate. SOLUTION: When a wetting layer 2 having InAs as its main component is grown on a GaAs substrate 1 (or an AlAs substrate or a GaAlAs alloy substrate), a Ga atom or a Ga atom cluster made of a plurality of Ga atoms mingled in In atoms is positioned in a wetting layer 2, and a quantum dot 4 having InAs as its main component is formed on the wetting layer 2 at a position corresponding to the positioned Ga atom or the Ga atom cluster. COPYRIGHT: (C)2006,JPO&NCIPI |
