| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a device, which is a semiconductor device, especially a high frequency and high power device having a plurality of gates formed like fingers, such as HEMT, and is smaller than a well-known air bridge structure, and is required to be high in heat dissipating properties. SOLUTION: The method is suitable for producing the high power device, such as high electron mobility transistor (HEMT). The semiconductor device has a plurality of groups composed of a source, a drain, and a gate contact, or a plurality of groups composed of an emitter, a base, and a collector contact, and respective kinds of contacts in the groups are connected with a common gate, drain and source (or base, collector, emitter) contact. The device is not produced by the air bridge structures, but by etching vias through the semiconductor layer, and directly connected to a contact layer on the backside of the device. COPYRIGHT: (C)2006,JPO&NCIPI |
