THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND FABRICATION METHOD THEREOF

摘要

A thin film transistor having a chalcogenide layer and a fabrication method thereof are provided to utilize the chalcogenide layer as an optical conductive layer, and to compose an optical or electrical thin film transistor by applying the rectification function of a diode. An amorphous chalcogenide layer(205a) forms a channel layer. A crystalline chalcogenide layer(205b) is formed on both sides of the amorphous layer to form a source region and a drain region. A source and drain electrodes(210,215) are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. A gate electrode is formed on or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode.