| 发明名称 |
METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY |
| 摘要 |
<p>A method for manufacturing a phase-change memory is provided to reduce manufacturing cost and simplify manufacturing process by deposing a contact plug at an apparatus provided to deposit phase-change films, and performing the in-situ process continuously. A wiring layer(50) is deposited on a substrate(40). Poly-silicon is used as a row material of the wiring layer. An insulating layer(60) is deposited and patterned. A contact plug(70) is formed by depositing a composition which forms a resistive matter by reacting with the wiring layer. An alloy resistive matter is formed by reacting the contact plug and the wiring layer. A phase-change film(80) composed of chalcogenide compound containing the composition is formed on the contact plug. An upper part electrode(85) is formed with a tungsten plug.</p> |
| 申请公布号 |
KR20080032349(A) |
申请公布日期 |
2008.04.15 |
| 申请号 |
KR20060097976 |
申请日期 |
2006.10.09 |
| 申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
LEE, KI HOON;JUNG, YU MIN |
| 分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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