EXPOSURE MASK FOR FORMING STORAGE NODE OF CAPACITOR IN SEMICONDUCTOR MEMORY DEVICE

摘要

An exposure mask for forming a capacitor storage node of a semiconductor memory device is provided to improve refresh characteristics of the device and increase sensing margin by securing effective area of a capacitor electrode for increasing capacitance. An exposure mask(100) for forming a capacitor storage node of a semiconductor memory device comprises a plurality of 'n' or 'u'-shaped light-transmission patterns(101). The light-transmission pattern comprises the first rectangular pattern(101A), and rectangular second and third patterns(101B,101C) that are respectively elongated perpendicularly to one side of major axis of the first pattern.