发明名称 PRECURSORS FOR CVD SILICON CARBO-NITRIDE FILMS
摘要 <p>Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si x C y N z . These aminosilanes, in contrast to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R 1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R 1 in formula A also being combinable into a cyclic group, and R 2 representing a single bond, (CH 2 ) n , a ring, or SiH 2 .</p>
申请公布号 KR100822154(B1) 申请公布日期 2008.04.15
申请号 KR20060043601 申请日期 2006.05.15
申请人 发明人
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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