发明名称 |
METHOD OF FORMING MEMORY CIRCUITRY WITH DIFFERENT INSULATIVE SIDEWALL SPACERS |
摘要 |
The invention includes methods of forming memory circuitry. In one implementation, a substrate is provided which has a memory array circuitry area and a peripheral circuitry area. The memory array circuitry area comprises transistor gate lines having a first minimum line spacing. The peripheral circuitry area comprises transistor gate lines having a second minimum line spacing which is greater than the first minimum line spacing. Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area. Other aspects and implementations are contemplated.
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申请公布号 |
KR20080032644(A) |
申请公布日期 |
2008.04.15 |
申请号 |
KR20087005106 |
申请日期 |
2006.07.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PAREKH KUNAL R.;MATHEW SURAJ;COLE STEVE |
分类号 |
H01L21/336;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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