| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which etching residues of a polysilicon film on an inter-layer insulating film covering a MOS transistor can be reduced during electrode formation of a bipolar transistor. SOLUTION: The manufacturing method of the semiconductor device includes the steps of: (a) forming the inter-layer insulating film 65 covering a semiconductor substrate 51 where the bipolar transistor 5 and MOS transistors 6a and 6b are formed; (b) flattening the inter-layer insulating film 65; (c) forming an opening portion 68 for an electrode 70 of the bipolar transistor 5 in the inter-layer insulating film 66; (d) forming the polysilicon 69 covering the inter-layer insulating film 66 and opening portion 68; and (e) etching back the polysilicon film 69 on the inter-layer insulating film 66 to form an electrode 70 in the opening portion 68. COPYRIGHT: (C)2009,JPO&INPIT
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