| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device excellent in the reliability of reading data, and to provide a method for reading data thereof. SOLUTION: A DRAM 1, which is the semiconductor storage device where data is read by comparing the potential of a memory cell with the reference potential of a reference cell, is provided with a bit line 14, a bit line 16, a reference cell 20, and a reference cell 30. The bit line 14 and the bit line 16 are connected with the same sense amplifier 12. The bit line 14 and the bit line 16 are connected respectively with the reference cell 20 and the reference cell 30. The DRAM 1 is configured so as to simultaneously start writing of the reference potential to the reference cell 20 and the reference cell 30. COPYRIGHT: (C)2009,JPO&INPIT
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