| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor capable of obtaining a large capacitance even when miniaturizing a half pitch, while having a dielectric film having a high dielectric constant and a small leakage current, to provide a manufacturing method of the capacitor, to provide a manufacturing apparatus of the capacitor, and to provide a semiconductor memory device. SOLUTION: This capacitor 10 has a lower electrode 1, an upper electrode 3, and a dielectric film 2 provided between the lower electrode 1 and the upper electrode 2, and at least a part of the dielectric film 2 is formed by laminating an aluminum oxide film 4 formed by an ALD method and a titanium oxide film 5 formed by the ADL method. It is preferable that in the dielectric film, the composition ratio x of Al and the composition ratio y of Ti satisfy the relation of 7≤[x/(x+y)]×100≤35. COPYRIGHT: (C)2009,JPO&INPIT
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