| 摘要 |
PROBLEM TO BE SOLVED: To provide a high yield, low cost, high sensitivity semiconductor pressure sensor having a simple structure and low temperature dependency wherein thickness control over the diaphragm part thereof, etc., can be carried out easily. SOLUTION: A plurality of Schottky barrier diodes are formed on a semiconductor substrate 17 dispersively. Each of the Schottky barrier diodes D1, D2, D3, and D4 is formed of a barrier film, an electrode, and the semiconductor substrate. By bringing the barrier films 1, 3, 5, and 7 into contact with the semiconductor substrate 17, depletion layers are generated in the contact surface on the semiconductor substrate 17 side, and Schottky barriers are generated. This Schottky junction part is included in the diaphragm region 18 of the semiconductor substrate 17 and becomes the region for sensing pressure. COPYRIGHT: (C)2009,JPO&INPIT
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