摘要 |
A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.
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申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;ARNO, JOSE, I.;OLANDER, W., KARL;KAIM, ROBERT |
发明人 |
ARNO, JOSE, I.;OLANDER, W., KARL;KAIM, ROBERT |