| 摘要 |
In order to take advantage of the properties of a display device having an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are needed. The protective circuit is formed using a nonlinear element including a gate insulating film covering a gate electrode, a first semiconductor layer on the gate insulating film, a channel protective layer covering a region that overlaps a channel formation region of the first oxide semiconductor layer, and a first wiring layer and a second wiring layer on the first oxide semiconductor layer, the first and second wiring layers where a conductive layer and a second oxide semiconductor layer are stacked. The gate electrode is connected to a scan line or a signal line, and the first wiring layer or second wiring layer is directly connected to the gate electrode. |
