| 摘要 |
According to one embodiment, a semiconductor memory device includes a cell array including a plurality of memory cells, a reference circuit, a sense amplifier for sensing a read current flowing through the memory cell, and a reference current flowing through the reference circuit, a write driver for writing data to the memory cell, a sub cell area including the cell array, the sense amplifier, and the write driver, a memory area including a plurality of sub cell areas, and a control circuit for supplying first write data to the sub cell area including the sense amplifier which performs a first read operation of supplying the read current to a selected memory cell without supplying the reference current. |
| 主权项 |
1. A semiconductor storage device comprising:
a cell array including a plurality of memory cells; a sense amplifier reading data of the memory cell; a write driver writing data to the memory cell; a sub cell area including the cell array, the sense amplifier, and the write driver; a memory area including a plurality of sub cell areas; and a control circuit, when performing a first read operation of reading data from a selected sub cell area, supplying first write data to the sub cell area including the sense amplifier which performs the first read operation, for selecting the sub cell area as a target of the first read operation. |
