Tunnel MOSFET with ferroelectric gate stack

摘要

A Tunnel Field-Effect Transistor (TFET) includes a source region in a semiconductor substrate, and a drain region in the semiconductor substrate. The source region and the drain region are of opposite conductivity types. The TFET further includes a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack. The gate stack includes a gate dielectric over the semiconductor substrate, and a ferroelectric layer over the gate dielectric.

主权项

1. A Tunnel Field-Effect Transistor (TFET) comprising:
a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate, wherein the source region and the drain region are of opposite conductivity types; and a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack, wherein the gate stack comprises:
a gate dielectric over the semiconductor substrate, wherein the gate dielectric comprises a high-k dielectric material; anda ferroelectric layer over the gate dielectric, wherein the gate dielectric and the ferroelectric layer have a same composition, and the gate dielectric has an amorphous structure, and the ferroelectric layer has a crystalline structure; and a diffusion barrier overlying the high-k dielectric material and underlying the ferroelectric layer.