THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a display device including a thin film transistor, and a method to manufacture the same. According to an embodiment of the present invention, the method to manufacture the thin film transistor comprises: a step of forming a wall layer on a substrate; a step of forming a semiconductor layer on the wall layer; a step of forming a gate insulation film on the semiconductor layer; a step of forming a gate electrode on the gate insulation film; a step of forming an offset region on a boundary of the gate electrode via plasma heat treatment or an annealing process; a step of etching an offset region of the gate electrode; a step of etching a gate insulation film except for the gate insulation film located under the gate electrode; a step of forming an interformational insulation film on the gate electrode; and a step of forming a source electrode and a drain electrode after etching the interformational insulation film.