| 摘要 |
The present invention relates to a method for producing graphene grown on a substrate without catalyst and graphene grown on a substrate without catalyst. The method for producing graphene on a substrate without catalyst comprises the following steps of: a. arranging a catalyst-free layer on a substrate; b. providing an etching gas and a carbon-containing gas, and conducting chemical vapor deposition (CVD); c. supplying an etching gas for a catalyst-free layer when supplying the carbon-containing gas, and growing graphene on the catalyst-free layer through Van der Waals type heteroepitaxial growth which adsorbs and diffuses hydrocarbon radicals on the catalyst-free layer and generates nucleus on a surface of the catalyst-free layer; and d. continuously conducting CVD from the process of the c, and growing graphene on the substrate without the catalyst-free layer by continuously removing all of the catalyst-free layer by the etching gas. |
