Method of measuring contamination amount of vapor phase growth apparatus, and method of manufacturing epitaxial wafer

摘要

Carry out a vapor etching step of cleaning an inside of a chamber of a vapor phase growth apparatus by vapor etching using HCl gas (S1). Carry out an annealing step of sequentially annealing a predetermined number of silicon wafers, one by one, in a non-oxidizing atmosphere (S2, S3). Repeat the vapor etching step and the annealing step a prescribed number of times. After having carried out the vapor etching step and the annealing step the prescribed number of times (S4: Yes), collect contaminants on the surface of each of the wafers, and measure the Mo concentration using ICP-MS (S5). Evaluate the cleanliness of the vapor phase growth apparatus on the basis of each Mo concentration value and the relationship between the Mo concentrations (S6). Thus, provided is a method with which it is possible to measure, with high sensitivity, the contamination amount of a vapor phase growth apparatus.

主权项

1. A method of measuring an amount of contamination of a vapor phase growth apparatus, comprising:
a vapor etching step of cleaning an inside of a chamber of a vapor phase growth apparatus by vapor etching using HCl gas; an annealing step of sequentially annealing a predetermined number of wafers, one by one, in a non-oxidizing atmosphere in the chamber after the vapor etching; and a measurement step of measuring a concentration of a metal impurity on a surface of each of the wafers annealed in the annealing step, as the amount of contamination of the vapor phase growth apparatus, wherein a process which performs the vapor etching step and performs the annealing step for the predetermined number of wafers after the vapor etching step is repeatedly performed a predetermined number of times, the annealing step is performed such that the same wafers are used throughout the repeated annealing step and the order of the wafers to be annealed is not changed throughout the repeated annealing step, and the measurement step is performed after the process has been repeatedly performed the predetermined number of times.