发明名称 Heat assisted handling of highly warped substrates post temporary bonding
摘要 A heated non-contact wafer handling gripper may heat a thin device wafer bottom surface having a temporary bonding adhesive residue after debonding of the device wafer from a carrier along a layer of temporary bonding adhesive that bonds the wafers. The gripper may heat residue of the adhesive that remains on the bottom surface while gripping, transferring and placing the wafer onto an adhesive cleaning chuck. The heated adhesive cleaning chuck may heat the thin device wafer bottom surface having the adhesive residue after being placed on the chucks. The chuck may heat the residue of the adhesive while the residue is cleaned from the wafer. Due to the heating by the chuck and/or gripper, wafer warpage and associated problems due to cooling of the residue may be eliminated or acceptable for wafer handling and adhesive cleaning.
申请公布号 US9437468(B2) 申请公布日期 2016.09.06
申请号 US201414229902 申请日期 2014.03.29
申请人 Intel Corporation 发明人 Brun Xavier F.;Ma Huan
分类号 H01L21/67;H01L21/683;H01L21/02 主分类号 H01L21/67
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A heated non-contact wafer handling gripper comprising: a bottom surface having pods for emitting gas to form a vacuum between the bottom surface of the gripper and a surface of a device wafer, the vacuum to cause the bottom surface of the gripper to (1) hold and move the device wafer (2) without being in physical contact with the surface of the device wafer; and a heater to heat the bottom surface of the gripper.
地址 Santa Clara CA US