发明名称 Underfill material and method for manufacturing semiconductor device by using the same
摘要 A method for manufacturing a semiconductor device by using underfill material includes: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent; and a reflow step configured to solder-bond the semiconductor chip and the substrate by a reflow furnace. The film forming resin of the underfill material has a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, and accordingly, the viscosity at the time of heat melting can be reduced, and a semiconductor chip can be mounted at a low pressure.
申请公布号 US9437462(B2) 申请公布日期 2016.09.06
申请号 US201414547660 申请日期 2014.11.19
申请人 DEXERIALS CORPORATION 发明人 Koyama Taichi
分类号 C08L53/00;C08L63/00;C08L63/02;H01L21/56;C08L33/08;C08L33/10;C08L29/02;C08L29/14;C08L75/04;C08L75/06;C08L75/08;C08L67/02;C08G59/42;H01L23/29;H01L23/00 主分类号 C08L53/00
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A method of manufacturing a semiconductor device comprising: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent, wherein the film forming resin is a tri-block copolymer of p-hydroxystyrene and ethyl vinyl ether; and a reflow step configured to solder-bond the above-mentioned semiconductor chip and the above-mentioned substrate by a reflow furnace.
地址 Tokyo JP