| 发明名称 | Method of manufacturing semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas. | ||
| 申请公布号 | US9437426(B2) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201414227360 | 申请日期 | 2014.03.27 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC. | 发明人 | Nakaiso Naoharu;Yuasa Kazuhiro;Kitahara Yuki |
| 分类号 | C23C16/24;H01L21/02;H01L21/3205;C23C16/455 | 主分类号 | C23C16/24 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate; a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×1020 atom/cm3 or less on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas. | ||
| 地址 | Tokyo JP | ||