| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
| 摘要 |
A semiconductor storage device according to one embodiment includes a memory cell. A first latch is selectively coupled to the memory cell. A first bus coupled to the first latch and a second latch. A first charger charges the first bus. A second bus transmits a signal of the same value both when first data is output and when second data is output from the first or second latch A second charger raises a voltage of the second bus from a first value to a second value. A controller whose input is coupled to the second bus controls the first charger to stop charging of the first bus based on the voltage of the second bus having reached the second value. |
| 申请公布号 |
US2016267045(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514844089 |
申请日期 |
2015.09.03 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Kaga Hiroyuki |
| 分类号 |
G06F13/42;G06F13/40;G11C7/00;G06F13/16 |
主分类号 |
G06F13/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a memory cell; a first latch selectively coupled to the memory cell; a second latch; a first bus coupled to the first and second latches; a first charger which charges the first bus; a second bus which transmits a signal of the same value both when first data is output and when second data is output from the first or second latch; a second charger which raises a voltage of the second bus from a first value to a second value; and a controller whose input is coupled to the second bus and which controls the first charger to stop charging of the first bus based on the voltage of the second bus having reached the second value. |
| 地址 |
Minato-ku JP |
