发明名称 High bandwidth amplifier
摘要 An amplifier (100) comprising: first, second, third and fourth transistors (M1, M2, M3, M4), an input (10) for an input signal, and a first output (22) for a first amplified signal;a first terminal (T11) of the first transistor (M1) coupled to a first voltage rail (12), a second terminal (T12) of the first transistor (M1) coupled to a first terminal (T31) of the third transistor (M3), and a gate (G1) of the first transistor (M1) coupled to the input (10);a first terminal (T21) of the second transistor (M2) coupled to a second voltage rail (14), a second terminal (T22) of the second transistor (M2) coupled to the first output (22), and a gate (G2) of the second transistor (M2) coupled to the input (10);a load (40) coupled between a second terminal (T32) of the third transistor (M3) and a third voltage rail (20), and a gate (G3) of the third transistor (M3) coupled to a bias node (16) for applying a bias voltage to the gate (G3) of the third transistor (M3);a first terminal (T41) of the fourth transistor (M4) coupled to the first output (22), a second terminal (T42) of the fourth transistor (M4) coupled to a fourth voltage rail (24), and a gate (G4) of the fourth transistor (M4) coupled to the second terminal (T32) of the third transistor (M3); anda first capacitive element (C1) coupled between the second terminal (T32) of the third transistor (M3) and the first output (22).
申请公布号 US9444413(B2) 申请公布日期 2016.09.13
申请号 US201514432759 申请日期 2015.02.04
申请人 Telefonaktiebolaget LM Ericsson (publ) 发明人 Mastantuono Daniele;Mattisson Sven
分类号 H03F3/68;H03F1/42;H03F3/19;H03F3/60 主分类号 H03F3/68
代理机构 Coats & Bennett, PLLC 代理人 Coats & Bennett, PLLC
主权项 1. An amplifier, comprising: a first transistor, a second transistor, a third transistor, and a fourth transistor; an input for an input signal, and a first output for a first amplified signal; a first terminal of the first transistor coupled to a first voltage rail, a second terminal of the first transistor coupled to a first terminal of the third transistor, and a gate of the first transistor coupled to the input; a first terminal of the second transistor coupled to a second voltage rail, a second terminal of the second transistor coupled to the first output, and a gate of the second transistor coupled to the input; a load coupled between a second terminal of the third transistor and a third voltage rail, and a gate of the third transistor coupled to a bias node for applying a bias voltage to the gate of the third transistor; a first terminal of the fourth transistor coupled to the first output, a second terminal of the fourth transistor coupled to a fourth voltage rail, and a gate of the fourth transistor coupled to the second terminal of the third transistor; and a first capacitive element coupled between the second terminal of the third transistor and the first output.
地址 Stockholm SE