发明名称 Light-emitting device, light-emitting device package, and light unit
摘要 A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a first electrode which is arranged under the light-emitting structure and is electrically connected to the second conductive semiconductor layer; a reflection layer which is arranged inside the second conductive semiconductor layer and arranged apart from the first electrode and the active layer; and a second electrode which is electrically connected to the first conductive semiconductor layer.
申请公布号 US9450146(B2) 申请公布日期 2016.09.20
申请号 US201314405473 申请日期 2013.05.24
申请人 LG INNOTEK CO., LTD. 发明人 Jeong Hwan Hee
分类号 H01L33/00;H01L33/10;H01L33/36;H01L33/22;F21K99/00;F21V3/04;F21Y101/02;F21Y111/00;F21Y113/00;F21V29/74 主分类号 H01L33/00
代理机构 KED & Associates, LLP 代理人 KED & Associates, LLP
主权项 1. A light-emitting device comprising: a light-emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode arranged under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a reflective layer arranged inside the second conductive semiconductor layer and spaced apart from the first electrode and the active layer; and a second electrode electrically connected to the first conductive semiconductor layer, wherein the first electrode has a first region making contact with a bottom surface of the second conductive semiconductor layer and a second region extending outward from the first region, and wherein the second conductive semiconductor layer includes a first semiconductor layer provided on the reflective layer and a second semiconductor layer provided under the reflective layer such that the reflective layer is provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the second semiconductor layer being made of a same material.
地址 Seoul KR