发明名称 STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A storage device includes a first wiring layer, a second wiring layer above the first wiring layer, a third wiring layer above the second wiring layer, a first contact in electrical contact with the first and third wiring layers and electrically insulated from the second wiring layer, a second contact in electrical contact with the first and second wiring layers and electrically insulated from the third wiring layer, and an insulating layer in contact with the second contact and above the third wiring layer, the first contact, and the second contact.
申请公布号 US2016276584(A1) 申请公布日期 2016.09.22
申请号 US201514839873 申请日期 2015.08.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOBAYASHI Yusuke
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项 1. A storage device comprising: a first wiring layer; a second wiring layer above the first wiring layer; a third wiring layer above the second wiring layer; a first contact in electrical contact with the first and third wiring layers and electrically insulated from the second wiring layer; a second contact in electrical contact with the first and second wiring layers and electrically insulated from the third wiring layer; and an insulating layer in contact with the second contact and above the third wiring layer, the first contact, and the second contact.
地址 Tokyo JP