SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the second electrode. The third semiconductor region is provided between the first semiconductor region and the second electrode, is provided beside the second semiconductor region in a second direction crossing a first direction from the first electrode toward the second electrode, and a portion of the first semiconductor region is positioned between the third and second semiconductor regions. The fourth semiconductor region is provided between the portion of the first semiconductor region and the second electrode and has a greater impurity concentration than the second and third semiconductor regions.

主权项

1. A semiconductor device comprising:
a first electrode; a second electrode; a first semiconductor region of a first conductivity type provided between the first electrode and the second electrode; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the second electrode; a third semiconductor region of the second conductivity type provided between the first semiconductor region and the second electrode, the third semiconductor region being provided beside the second semiconductor region in a second direction crossing a first direction from the first electrode toward the second electrode, and a portion of the first semiconductor region being positioned between the second semiconductor region and the third semiconductor region; and a fourth semiconductor region of the second conductivity type provided between the portion of the first semiconductor region and the second electrode, and the fourth semiconductor region having an impurity concentration greater than an impurity concentration in the second semiconductor region and an impurity concentration in the third semiconductor region.